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Titanium silicide
Basic information
Titanium silicide is a kind of inorganic substance, which belongs to metal silicide. The chemical formula is TiSi2 titanium silicide structure and properties. TiSi2 has two kinds of polycrystalline phases: metastable C49 phase and thermodynamically stable C54 phase. The C49 phase is an orthorhombic hypocentric crystal system, each unit cell is composed of 12 atoms, the unit cell size is as follows: axium 0.362 nm ·cm ~ 1.376 nm ~ 0.360 nm, resistivity ρ = 60 ~ 100 μ m cm. The C54 phase is an orthogonal face-centered crystal system, each unit cell is composed of 24 atoms, the unit cell size is: axiom 0.826nm ·cm ~ 0.480nm ·cm ~ 0.853nm, resistivity ρ = 12 ~ 20 μ m cm. The purpose of preparing titanium silicide is to obtain the TiSi2 of low resistance TiSi2,C54 phase which has the same resistivity as the metal body. Therefore, the purpose of preparing titanium silicide is to get the c of C54 phase. Titanium silicide is prepared by physical vapor deposition (sputtering and thermal evaporation) and chemical vapor deposition (CVD). Titanium silicide (TiSi2) has very ideal characteristics: high electrical conductivity, high selectivity, good thermal stability, good adsorption to Si, good process adaptability and low interference to silicon connection parameters.
Product description
Titanium silicide is widely used in the manufacture of gate, source / drain, interconnection and ohmic contact of metal oxide semiconductor (MOS), metal oxide semiconductor field effect transistor (MOSFET) and dynamic random access memory (DRAM).
(1) preparing a titanium silicide barrier layer;
(2) preparing an in situ synthesized titanium silicide (Ti5Si3) particle reinforced aluminum titanium carbide (Ti3AlC2) matrix composite;
(3) preparing composite functional titanium silicide coated glass;
(4) preparing a semiconductor element, including a silicon substrate, on which a gate, source and drain are formed, and an insulating layer is formed between the gate and the silicon substrate;
(5) Because silicon zirconium intermetallic compounds have excellent physical and chemical properties, ZrSi2 is a structural material or a new type of engineering material that can be used as a high-temperature corrosive medium.
Product parameters
The product name |
Titanium silicide |
Density |
4.39g/cm³ |
Coefficient of thermal expansion |
- |
Molecular formula |
TiSi2 |
Melting point |
1540℃ |
Mohs hardness |
- |
Appearance form |
Grayish black powder |
Boiling point |
1450℃ |
Microhardness |
- |
CAS number |
12039-83-7 |
Resistivity |
- |
Storage mode |
Closed at room temperature, cool, ventilated and dry |
Molecular weight |
104.04 |
Electrical conductivity |
- |
- |
- |
At present, the factory can produce products of different particle sizes, such as nanometer level, submicron level, micron level and so on. The products that have been industrially produced are 5 μ m, which can be supplied at tonnage level and can be customized by customers with other granularity. The standard packing specification is 500g weight 1kg, which can be customized according to the quantity of materials put in by customers.
Further reading
The use of titanium silicide: with the rapid development of very large scale integrated circuit (ULSI), the size of equipment and devices is getting smaller and smaller, and people have higher and higher requirements for the uniformity of device size and film quality and thickness. At present, the linewidth of semiconductor devices is less than 0.1 μ m, and the continuous wire with low resistance can not be obtained by the original process. New materials, new processes and new deposition systems must be found to improve or replace aluminum and heavily doped polysilicon for circuit metallization connection. Among these new materials, there is a great increase in interest in metal silicide which has high electrical conductivity and high temperature stability and is compatible with the current microelectronic manufacturing process.
Related papers
[1]Xu Xiangqin, du Jun. Preparation and application of titanium silicide thin films [J]. Electroplating and finishing, 2007 (09): 29-32+35.DOI:10.19289/j.1004-227x.2007.09.009.
[2], plasma CVD titanium silicide technology. Fudan University, 1987-12-01.
[3],Aluminum titanium carbide / titanium silicide composite and preparation method thereof. Liaoning Province, Institute of Metal Research, Chinese Academy of Sciences, 2008-01-01.
Product Showcase
Recommended product 1:Titanium silicide Product specifications 1-3μm
XRD spectrogram, SEM scanning electron microscopy, laser particle size
Recommended product 2: Titanium silicide particle size 0.8μm
Product test report: SEM scan electron microscopy
Product packaging
Product purchase Q&A
Q: We use it in the lab, do you have small packages?
A: Yes, for laboratory needs, we generally have 100g/250g/500g/1kg and other packaging specifications to meet the needs of laboratory research users.
Q: I see that some companies offer 99.9% of the products, why don't you have such high-purity products?
A: The purity of the product is determined by many factors such as raw materials, production processes, testing methods and other aspects of the product. Different detection methods for the same material, may vary greatly in purity. In addition to purity concerns, you need to understand what the purity test method is to determine the reliability of this purity. It is quite possible that the actual purity of a 98% purity product and a product of 99.9% purity is much the same.